▎ 摘　　要

NOVELTY - This utility new type refers to a nitride film LED flip chip based on SiC substrate, a n type electrode, nitride epitaxy layer and a p-type electrode and the n type electrode is attached in the epitaxy layer on nitride, said nitride epitaxy layer is attached at the p-type upper electrode, wherein, said nitride epitaxy layer is a nitride epitaxy layer based on nitride LED epitaxy chip in a SiC substrate, a nitride LED epitaxial wafer is based on SiC substrate a SiC substrate graphene layer and said nitride epitaxy layer, the graphene is attached in the SiC substrate over, the nitride epitaxy layer is attached at the graphene layer up. Because of adding a graphene layer, between a nitride epitaxy layer and graphene exist with a weak key connected with module, for after separation of nitride epitaxy layer and SiC substrate provide the condition.