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  • 专利标题:   Selenium solar battery device has substrate, back electrode layer, indium-gallium-selenium light absorption layer, buffer layer, barrier layer and conductive window layer, which is n-shaped graphene film.
  • 专利号:   CN102522437-A, CN102522437-B
  • 发明人:   ZHANG K, XIAO X, YIN L
  • 专利权人:   UNIV CHINESE HONG KONG, SHENZHEN INST ADVANCE TECHNOLOGY CHINESE, SHENZHEN INST ADVANCED TECHNOLOGY
  • 国际专利分类:   C23C028/00, H01L031/032, H01L031/18
  • 专利详细信息:   CN102522437-A 27 Jun 2012 H01L-031/032 201257 Pages: 15 Chinese
  • 申请详细信息:   CN102522437-A CN10422209 15 Dec 2011
  • 优先权号:   CN10422209

▎ 摘　　要

NOVELTY - A selenium solar battery device has a substrate, a back electrode layer, indium-gallium-selenium light absorption layer, a buffer layer, a barrier layer and a conductive window layer, which is n-shaped graphene film. USE - Selenium solar battery device. ADVANTAGE - The selenium solar battery device has improved performance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for fabrication of selenium solar battery device.