• 专利标题:   Synthesizing graphene using plasma enhanced chemical vapor phase involves taking plasma enhancing chemical vapor synthesis device, where plasma enhancing chemical vapor synthesis device comprises vacuum system, plasma initiation power.
  • 专利号:   CN107215859-A
  • 发明人:   YAN X, CHEN J, YANG B, CHENG B
  • 专利权人:   LANZHOU CHEM PHYSICS INST CHINESE ACAD
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN107215859-A 29 Sep 2017 C01B-032/186 201774 Pages: 7 Chinese
  • 申请详细信息:   CN107215859-A CN10529296 01 Jul 2017
  • 优先权号:   CN10529296

▎ 摘  要

NOVELTY - Synthesizing graphene using plasma enhanced chemical vapor phase involves taking plasma enhancing chemical vapor synthesis device, where plasma enhancing chemical vapor synthesis device comprises vacuum system, plasma initiation power supply air system, heating and pressure control system. The solid catalyst template is placed in a plasma enhancing chemical vapor synthesis device. The solid catalyst template is selected from lithium carbonate, sodium carbonate, potassium carbonate, potassium chloride, sodium chloride, sodium sulfate or potassium sulfate. USE - Method for synthesizing graphene using plasma enhanced chemical vapor phase (claimed). ADVANTAGE - The method enables to synthesize graphene using plasma enhanced chemical vapor phase in a simple, eco-friendly and cost-effective manner. DETAILED DESCRIPTION - Synthesizing graphene using plasma enhanced chemical vapor phase involves taking plasma enhancing chemical vapor synthesis device, where plasma enhancing chemical vapor synthesis device comprises vacuum system, plasma initiation power supply air system, heating and pressure control system. The solid catalyst template is placed in a plasma enhancing chemical vapor synthesis device. The solid catalyst template is selected from lithium carbonate, sodium carbonate, potassium carbonate, potassium chloride, sodium chloride, sodium sulfate or potassium sulfate. The inert gas/reducing mixed is filled in a plasma enhancing chemical vapor synthesis device. The vacuum system is evacuated to 10-3 Pascal. The temperature is raised to 500-900 degrees C. The gas phase carbon source is introduced in plasma enhancing chemical vapor synthesis device. The dopant source gas is ammonia gas. The radio frequency or direct current source discharge is applied. The obtained mixture is cooled at room temperature under the inert gas or reducing gas protection. The gas is pumped in the vacuum chamber. The air inflation is carried out to atmospheric pressure to obtain a solid product. The obtained mixture is washed, filtered, and then filtered to obtain graphene powder.