▎ 摘　　要

NOVELTY - Modifying three-dimensional graphene/epoxy resin composite material with vertical graphene interface, comprises e.g. taking foamed nickel supported three-dimensional graphene as growth carrier of vertical graphene, carrying out plasma chemical vapor deposition and naturally cooling down to obtain vertical graphene-modified three-dimensional graphene supported by foamed nickel, either dissolving 0.5-5 g ferric chloride in 50 ml or more of 3 mol/l aqueous hydrochloric acid solution, and etching at room temperature for 24 hours, naturally drying or heating to obtain self-supporting vertical graphene-modified three-dimensional graphene, or dissolving 0.5-5 g ferric chloride in 50 ml or more of 3 mol/l aqueous hydrochloric acid solution, etching at 40-80 degrees C for 5-12 hours, naturally drying, or heating to obtain self-supporting vertical graphene modified three-dimensional graphene, and mixing with epoxy resin, curing agent and defoaming agent and naturally curing. USE - The vertical graphene modified three-dimensional graphene/epoxy resin composite material is useful in aerospace and high-tech industrial technology fields. ADVANTAGE - The vertical graphene modified three-dimensional graphene/epoxy resin composite material has high-quality interface phase; utilizes surface defect and nanostructure, which improves interface compatibility and bonding force; has excellent mechanical properties, electrical conductivity, thermal conductivity and electromagnetic shielding properties. DETAILED DESCRIPTION - Modifying three-dimensional graphene/epoxy resin composite material with vertical graphene interface, comprises (i) growing graphene with ethanol as carbon source using chemical vapor deposition method, using argon/hydrogen as carrier gas and foam nickel as graphene growth carrier, growing the nickel foam at a furnace temperature of 850-900 degrees C and argon/hydrogen flow rate of 180/20 sccm for 20-40 minutes to obtain three-dimensional graphene, (ii) using plasma chemical vapor deposition technology, using acetylene as carbon source, taking the foamed nickel supported three-dimensional graphene in step (i) as growth carrier of vertical graphene, carrying out plasma chemical vapor deposition at 650-750 degrees C with plasma power of 80-120 W under the environment flow rate of methane/hydrogen of 1/4 sccm for 80-150 minutes, naturally cooling down to room temperature and then taking out to obtain vertical graphene-modified three-dimensional graphene supported by foamed nickel, (iii) using mixed solution of ferric chloride and hydrochloric acid etching process, either dissolving 0.5-5 g ferric chloride in 50 ml or more of 3 mol/l aqueous hydrochloric acid solution, and etching at room temperature for 24 hours, taking out, rinsing with water until the pH is neutral, and naturally drying, or heating and drying below 100 degrees C to obtain self-supporting vertical graphene-modified three-dimensional graphene, or dissolving 0.5-5 g ferric chloride in 50 ml or more of 3 mol/l aqueous hydrochloric acid solution, etching at 40-80 degrees C for 5-12 hours, taking out, rinsing with clean water until the pH is neutral, naturally drying, or heating and drying below 100 degrees C to obtain self-supporting vertical graphene modified three-dimensional graphene, and (iv) placing the self-supporting vertical graphene-modified three-dimensional graphene material in a mold, mixing with epoxy resin, curing agent and defoaming agent in a mass ratio of 2-5:1:0.01, and naturally curing to obtain composite material.