▎ 摘　　要

NOVELTY - Transistor comprises a source electrode, a drain electrode, at least one graphene which is non-coplanar with the drain electrode, connected to the source electrode, a selectively etched insulating material layer provided on lower side of the graphene, at least one piezoelectric material provided on the etched insulating material layer and lower side of the graphene, and a barrier regulating circuit intersected with a circuit of the graphene, provided on lower side of the piezoelectric material. USE - The transistor is useful as graphene single-electron transistor and electron tunneling graphene transistor for on/off electricity of one-dimensionally, two-dimensionally and three-dimensionally electronic devices provided with central processing unit, memory and battery or electronic part (all claimed). ADVANTAGE - The transistor has fast processing speed than regular transistor. DETAILED DESCRIPTION - Transistor comprises a source electrode, a drain electrode, at least one graphene (200) which is non-coplanar with the drain electrode, connected to the source electrode, a selectively etched insulating material layer provided on lower side of the graphene, at least one piezoelectric material provided on the etched insulating material layer and lower side of the graphene, and a barrier regulating circuit (400) intersected with a circuit of the graphene, provided on lower side of the piezoelectric material; the source electrode, the drain electrode, the graphene, the barrier regulating circuit having a physical interval with upper portion of graphene, a particle having at least one electric charge, provided on lower portion of the graphene; the source electrode, the drain electrode, the graphene, the barrier regulating circuit, and at least one magnetic particle (110) provided on lower side of the graphene; where the transistor controls on/off electricity by providing graphene with at least one bending deformation generated by: voltage of the barrier regulating circuit and the piezo material, the particle, the magnetic particles; or inducing electrostatic attraction on the graphene, and controls on/off electricity by adjusting fermi-level height of graphene between graphene and the drain electrode. INDEPENDENT CLAIMS are also included for: (1) graphene single-electron transistor comprising the source electrode, the drain electrode, at least one graphene, the insulating layer, a single common island electrode coupled to a variation free layer and an insulating layer with the graphene, and with the drain electrode via a tunnel junction, the selectively etched insulating material layer, the piezoelectric material, the barrier adjusting circuit, where the graphene single-electron transistor is produced by (a) providing at least one graphene with the insulating layer using voltage of the barrier adjusting circuit and circuit of the graphene and piezoelectric material, (b) tunneling the electron (300) on the island electrode, (c) placing the tunnel to the drain electrode, (d) reaching fermi level of the drain electrode, or the source electrode, the drain electrode, the graphene, the barrier regulating circuit having a physical interval with upper portion of graphene, a particle having at least one electric charge, provided on lower portion of the graphene, or the source electrode, the drain electrode, the graphene, the barrier regulating circuit, and at least one magnetic particle provided on lower side of the graphene, or two electrodes made of graphene, connected to deformation free layer and the insulating layer and the drain electrode connected to the common island electrode via a tunnel junction; and (2) electron tunneling graphene transistor comprising the source electrode, the drain electrode, at least one graphene, the deformation free layer and the insulating layer, the selectively etched insulating material layer, the piezoelectric material, the barrier adjusting circuit, the source electrode, the drain electrode, the graphene, the barrier regulating circuit having a physical interval with upper portion of graphene, a particle having at least one electric charge, provided on lower portion of the graphene, or the source electrode, the drain electrode, the graphene, the barrier regulating circuit, and at least one magnetic particle provided on lower side of the graphene, where the electron tunneling graphene transistor is obtained by performing (a), (b) and (c). DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the transistor. Magnetic particle (110) Graphene (200) Electron (300) Barrier adjusting circuit (400)