▎ 摘　　要

NOVELTY - Edge-halogenation (P1) of a graphene material involves reacting the graphene material selected from graphene, graphene nanoribbon, and/or graphene molecule with a halogen-donor compound in the presence of a Lewis acid, so as to obtain an edge- halogenated graphene material. USE - For edge-halogenation of a graphene material for making edge-halogenated graphene material, which is used in electronic, optical, or optoelectronic device e.g. organic field effect transistor device, an organic photovoltaic device, or an organic light-emitting diode (claimed). ADVANTAGE - The graphene materials such as graphene, graphene nanoribbons and graphene molecules can be halogenated very selectively at the edge (via at least partially substituting those residues which are covalently bonded to the sp 2-hybridized carbon atoms forming the edge of the starting graphene material), while suppressing very effectively any halogenation on the aromatic basal plane of the graphene material, and the degree of halogenation at the edge of the graphene material is very high and even be quantitative (i.e. 100%). The process allows high degree of edge halogenation, where any halogenation of the aromatic basal plane is more or less completely suppressed. The halogenated graphene materials obtained by the process have improved solubility compared to graphenes. The halogenated graphene molecules prepared by the process can be readily dissolved in common organic solvents such as toluene, chloroform and carbon disulfide so as to form a homogeneous solution. Due to the high degree of selective edge-halogenation, the halogenated graphene material obtained shows improved solubility or dispersibility in a liquid medium, in particular in an organic liquid medium such as toluene, chloroform, and carbon disulfide. The graphene material thus obtained can therefore easily be subjected to further transformations, e.g. chemical modifications within the graphene basal plane or partial or complete substitution of the halogen at the edges. As the halogenation process is selectively taking place at the edge but not on the aromatic basal plane, the electronic and optical properties of the graphene material can be modified and fine-tuned in a well-defined manner. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a halogenated graphene material (A1) obtainable by the process (P1); (2) a halogenated graphene material comprising an aromatic basal plane and an edge, where at least 65 mole% of the residues covalently attached to the edge of the halogenated graphene material are halogen atoms (HAE), and the edge-bonded halogen atoms HAE represent at least 95 mole% of all halogen atoms being present in the halogenated graphene material, and the halogenated graphene material is selected from a halogenated graphene, a halogenated graphene nanoribbon and a halogenated graphene molecule; (3) a composition comprising the graphene material (A1) dissolved or dispersed in a liquid medium; and (4) an electronic, optical, or optoelectronic device comprising a semiconductor film containing the graphene material (A1).