▎ 摘　　要

NOVELTY - A nanopillar LED chip comprises an insulating substrate, a graphene layer grown on the insulating substrate, and nano-pillar LEDs grown on the graphene layer at intervals. The nano-pillar LED comprises an n-gallium nitride layer, a multi-quantum well light emitting layer and a p-gallium nitride layer, spin-on-glass (SOG) fillers filled in the interval and surrounding portions of the nano-pillar LEDs and isolating the nano-pillar LEDs and avoids short circuit, an indium tin oxide transparent conductive layer connected to the p-gallium nitride layer of the nano-pillar LED and the SOG filler to achieve current expansion, and p/n electrode for preparation of nano-pillar LED chips on an insulating substrate. USE - Nanopillar LED chip. ADVANTAGE - The LED chip efficiently uses a graphene buffer layer to cover the n-electrode area before the growth of the nano-pillar through a photolithography process on the insulating substrate and exposes the graphene layer of the n-electrode region to be a current spreading layer of the n-electrode and realizes the extraction of the nano-pillar n-electrode on the insulating substrate after the growth. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of nanopillar LED chip.