▎ 摘　　要

NOVELTY - A semiconductor package is fabricated by preparing a lower element (10) including a lower substrate (12), a lower electrode (14) on the lower substrate, an under bump metallurgy (UBM) layer on the lower electrode, and a reducing agent layer (18) on the UBM layer (16); providing an upper element (20) including an upper substrate (22), an upper electrode (24) on the upper substrate, and a solder bump layer on the upper electrode; providing a pressing material on the upper substrate to press the upper substrate to the lower substrate; and providing a laser beam passing through the pressing material to the upper substrate to form the UBM layer, the reducing agent layer, and the solder bump layer as intermetallic compound layer by using a conductive heat of the upper substrate and the upper electrode. USE - Fabrication of semiconductor package. ADVANTAGE - The semiconductor package is minimized in thermal stress. The UBM layer and the solder bump layer may be formed as the intermetallic compound layer using the conductive heat of the upper substrate and the lower substrate, which are exposed to the laser beam, to minimize the thermal stress due to the difference in thermal expansion coefficient between the lower element and the upper element. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the method of fabricating the package. Lower element (10) Lower substrate (12) Lower electrode (14) UBM layer (16) Reducing agent layer (18) Upper element (20) Upper substrate (22) Upper electrode (24)