▎ 摘　　要

NOVELTY - The method involves forming a first epitaxial layer (120) on a first substrate, where the first substrate (110) comprises a first semiconductor material with a first lattice constant and the first epitaxial layer comprising a second semiconductor material with a second lattice constant different from the first lattice constant. A graphene layer (130) is formed on the first epitaxial layer. A second epitaxial layer (140) comprising the second semiconductor material is formed on the graphene layer. The graphene layer is formed on a second substrate. USE - Method for manufacturing a semiconductor device. Uses include but are not limited to solar cell, photodetector, transistor and LED. ADVANTAGE - The method enables releasing epi-layers grown on a graphene substrate easily and precisely released from the substrate, thus allowing rapid mechanical release of epilayers without post-release reconditioning of a released surface. The method enables reducing manufacturing costs by performing a minimal substrate refurbishment step after layer release and performing precise control of release thickness. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a semiconductor device formed with a two-dimensional (2D) material layer for dislocation filtering. Substrate (110) Epitaxial layers (120, 140) Graphene layer (130) Device structure (150)