▎ 摘　　要

NOVELTY - Preparing graphene and carbon nano tube mixture based on no electroplating copper silicon carbide particles comprises e.g. using chemical vapor deposition, the electroless plating copper silicon carbide grown on the surface of graphene, producing a mixture of graphene and carbon nano tube comprises processing the silicon carbide particle activation: the untreated silicon carbide particles to carry out alkali washing, acid washing and washing with deionized water, transferring into 90-98% tin (II) chloride solution, pouring the sensitizing treatment in palladium(II) chloride solution. USE - The method is useful for preparing graphene and carbon nano tube mixture based on no electroplating copper silicon carbide particles (claimed). ADVANTAGE - The method can effectively solve the graphene-reinforced material in the parent metal of the agglomeration phenomenon and improve the mechanical property of the material, is economical. DETAILED DESCRIPTION - Preparing graphene and carbon nano tube mixture based on no electroplating copper silicon carbide particles comprises using chemical vapor deposition, the electroless plating copper silicon carbide grown on the surface of graphene, producing a mixture of graphene and carbon nano tube comprises (i) processing the silicon carbide particle activation: the untreated silicon carbide particles to carry out alkali washing, acid washing and washing with deionized water, transferring into 90-98% tin (II) chloride solution, pouring the sensitizing treatment in palladium(II) chloride solution of 0.5-1 g/l for activation treatment, obtaining activated silicon carbide particles, (ii) electroless plating copper for preparing silicon carbide particle in the step (i) prepared by activation of silicon carbide particles is sufficient in the chemical copper plating solution, stirring plating at 20-40 degrees C for 50-70 minutes, filtering, transferring the filter cake to de-ionized water ultrasonic cleaning, drying to obtain the electroless copper silicon carbide particles, (iii) growth of graphene and carbon nano-tube mixture: using chemical vapor deposition method in the step (ii) obtained without plating copper silicon carbide particles in a pressure container, vacuumizing the container pressure below 1Pa centigrade, inletting reducing gas, slowly raising the temperature to 900-1100 degrees C, introducing carbon source gas, controlling the reducing gas and carbon source gas flow ratio is 1:1-2:1, increasing the pressure to 60-70 Pa, keeping for 10-15 minutes to graphene and carbon nano-tube mixture growth finishing, starting cooling, stopping inletting methane less than 900 degrees C less than 80 degrees C stopping inletting hydrogen, stopping vacuumizing, obtaining graphene and carbon nano-tube mixture modified electroless copper silicon carbide particles.