• 专利标题:   Forming nanofiber, comprises e.g. providing two dimension materials with charge bearing moieties on its planar surfaces and at its ends, reacting with proton donors, proton acceptors and hydrophobic counter ions, and crosslinking.
  • 专利号:   WO2023018373-A2, WO2023018373-A3
  • 发明人:   SPOLON MARANGONI V, CASTRO A H D, CALDEIRA FERRAZ DA COSTA M, KEITEL DONATO R, TAN H L
  • 专利权人:   UNIV SINGAPORE NAT
  • 国际专利分类:   C01B032/00, B82Y030/00, B82Y040/00, C01B021/064, C01B032/18, C01B032/194, C01B032/198, C01G039/06, D01F009/12
  • 专利详细信息:   WO2023018373-A2 16 Feb 2023 C01B-032/00 202325 Pages: 67 English
  • 申请详细信息:   WO2023018373-A2 WOSG050566 08 Aug 2022
  • 优先权号:   SG10008866

▎ 摘  要

NOVELTY - Forming a nanofiber, comprises: (a) providing two dimension (2D) materials with charge bearing moieties on its planar surfaces and at its ends; (b) reacting the charge bearing moieties on the planar surfaces with proton donors, proton acceptors, at least partially hydrophobic counter ions or a second 2D materials with oppositely charge bearing moieties on its planar surfaces and at its ends in order to curl the 2D material; and (c) simultaneously reacting the charge bearing moieties at the ends with proton donors, proton acceptors, at least partially hydrophobic counter ions or the second 2D materials with oppositely charge bearing moieties on its planar surfaces and at its ends, and crosslinking the neutralized charge bearing moieties at the ends in order for the 2D materials of step (b) to interact with each other to form the nanofiber. USE - The method is useful for forming nanofiber. ADVANTAGE - None given. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for nanofiber, where the nanofiber is characterized by a solid or semi-hollow cross sectional profile, where the nanofiber is characterized by a layered cross sectional profile of 2D materials curled up and bonded to each other at their planar surfaces and ends, and the 2D materials are selected from graphene, graphene oxide, few-layer transition-metal dichalcogenides or hexagonal boron nitride.