▎ 摘　　要

NOVELTY - Growing large mismatched indium gallium arsenide material involves covering 3-30 layers of graphene by growth or transfer on mismatched substrate, placing the substrate in growth chamber of gaseous source molecular beam epitaxy system, heating at 700-1000 degrees C, introducing arsine into the growth chamber, pyrolyzing at 900-1100 degrees C under pressure of 1x 10-5-5x 10-5 Torr, maintaining the temperature for 30 minutes, increasing the temperature at 500-550 degrees C, opening indium and gallium beam source furnace shutter and growing. USE - The method is useful for growing large mismatched indium gallium arsenide material. ADVANTAGE - The method is capable of growing large mismatched indium gallium arsenide material with excellent versatility.