▎ 摘　　要

NOVELTY - The method involves removing outer layer of graphene, using the rate controlled plasma etching method without the need of physical method. The crystal lattice defects of the graphene carbon atoms in the process of high temperature annealing and etching are produced. The multi-layer graphene or thick layers of graphite is made in accordance with the expected reduction. USE - Method for precisely etching and obtaining high quality small layer or single layer graphene used in transistor, sensor, transparent conducting electrode and flexible display. ADVANTAGE - Since the low density argon plasma is used to etch graphene, the accurate layered graphene is achieved. Since the multi-layer graphene or thick layers of graphite is made in accordance with the expected reduction, the multilayer graphene or thick layer graphite sheet is accurately etched. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the high quality single layer graphene and double layer graphene.