▎ 摘　　要

NOVELTY - The method involves forming a nickel film layer on a glass substrate by magnetic control sputtering process, where temperature of the glass substrate is 50-80 degree Celsius. A graphene film layer is formed on the nickel film layer by CVD process, where thickness of the graphene film layer is 50-90 microns. Cooling process is performed to obtain a semi-finished product. The temperature of the glass substrate is reduced to room temperature. The graphene film layer is cleaned by dilute nitric acid to remove the nickel film layer for obtaining a dry graphene conductive film. USE - Laminated graphene conductive film preparation method. ADVANTAGE - The method enables reducing production cost and improving operating efficiency.