• 专利标题:   Aluminum gallium nitride-based graphene template UV detector, has aluminum gallium nitride/aluminum nitride super-lattice layer provided with graphene template radiating layer, and n-type electrode and p-type electrode arranged at two sides of pin structure layer.
  • 专利号:   CN212161838-U
  • 发明人:   ZHAO Y, SHEN S, YOU L, LI X, LI T
  • 专利权人:   TONGHUI ELECTRONICS TECHNOLOGIES CO LTD
  • 国际专利分类:   H01L031/0224, H01L031/024, H01L031/0304, H01L031/105
  • 专利详细信息:   CN212161838-U 15 Dec 2020 H01L-031/105 202101 Pages: 7 Chinese
  • 申请详细信息:   CN212161838-U CN21383921 14 Jul 2020
  • 优先权号:   CN21383921

▎ 摘  要

NOVELTY - The utility model relates to the technical field of ultraviolet detector, claims an AlGaN-based graphene template ultraviolet detector, comprising a substrate, an AlGaN/AlN super-lattice layer orderly set on the substrate; an i-type Alx1Ga1-x1N intrinsic layer and a heterojunction pin structure layer; between the substrate and the AlGaN/AlN superlattice layer is provided with a graphene template radiating layer; two sides of the heterojunction pin structure layer and the top are respectively provided with an n-type electrode and a p-type electrode; the thickness of the graphene template radiating layer is 10nm-150nm, the detector effectively improves the radiating efficiency and photoelectric conversion efficiency of the detector, prevents the layer and damage of the detector layer material, at the same time, reduces the manufacturing difficulty of the detector.