▎ 摘　　要

NOVELTY - The semiconductor device has first and second graphene layers (14) individually formed on the side surfaces of the core (11) of a wiring (10). The graphene layers respectively contact first and second catalyst layers (13) and extend along the length direction of the core. The graphene layers include multiple graphemes laminated perpendicularly with respect to the corresponding side surfaces of the core. USE - Semiconductor device. ADVANTAGE - Enables increasing the width of the graphene layer to increase the number of hexagonal lattices in the width direction of the graphene layer without increasing the width of the wiring, thus suppressing an increase in wiring resistance attributable to an edge effect and a miniature wiring structure with low resistance can be obtained. DESCRIPTION OF DRAWING(S) - The drawing shows the perspective view of a semiconductor device. Contact plug (6) Wiring (10) Core (11) Catalyst layers (13) Graphene layers (14)