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  • 专利标题:   of emission comprises nanocluster in form of tape, obtained from graphene, placed at buffer layer of boron nitride.
  • 专利号:   RU110505-U1
  • 发明人:   ELIN V A
  • 专利权人:   ELIN V A
  • 国际专利分类:   G01T001/02
  • 专利详细信息:   RU110505-U1 20 Nov 2011 201248 Pages: 3 Russian
  • 申请详细信息:   RU110505-U1 RU132263 01 Aug 2011
  • 优先权号:   RU132263

▎ 摘　　要

NOVELTY - Sensor of emission comprises nanocluster in form of tape, which is obtained from graphene, placed at buffer layer of boron nitride, where the buffer layer is included in monoblock with external insulating coating, and ends of tape of graphene are made of conducting materials. USE - As sensor of emission.