• 专利标题:   Manufacture of nitrogen-doped reduced graphene for counter electrode, involves ultrasonicating-processing dispersion comprising compound containing graphene oxide and nitrogen compound in solvent, filtering, heating and classifying graphene.
  • 专利号:   WO2018043909-A1, KR2018024975-A
  • 发明人:   LIM J C, LEE J H, LEE H Y, PARK H S
  • 专利权人:   DAEJOO ELECTRONIC MATERIALS CO LTD
  • 国际专利分类:   C01B032/182, H01G009/20, C01B031/04
  • 专利详细信息:   WO2018043909-A1 08 Mar 2018 C01B-032/182 201820 Pages: 24
  • 申请详细信息:   WO2018043909-A1 WOKR007577 14 Jul 2017
  • 优先权号:   KR112091

▎ 摘  要

NOVELTY - Manufacture of nitrogen-doped reduced graphene involves preparing a dispersion by mixing a compound (a) containing graphene oxide and nitrogen compound in a solvent, ultrasonicating-processing the dispersion, filtering and drying the processed dispersion, heating the reduced graphene, and classifying the reduced graphene. USE - Manufacture of nitrogen-doped reduced graphene used for manufacturing counter electrode for dye-sensitized solar cell (all claimed). ADVANTAGE - The method enables simple and economical manufacture of high-purity nitrogen-doped reduced graphene with high productivity and high yield. The nitrogen-doped reduced graphene enables manufacture of counter electrode having excellent stability and corrosion resistance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of counter electrode, which involves dispersing the nitrogen-doped reduced graphene in a solvent to prepare a dispersion, coating the dispersion on a conductive transparent substrate to form a coating layer, and surface-treating the coating layer.