▎ 摘　　要

NOVELTY - Preparing high purity graphene involves preparing a polyamine salt solution, preparing a polyamic acid film by depositing the prepared polyamic acid salt solution onto a metal substrate using Langmuir-Blodgett (LB) technique, converting the polyamic acid film into a polyimide film by heating under an argon flow, heating the polyimide film to convert it into a carbon film, and maintaining the heated temperature to convert it to graphene, cooling the metal substrate on which the graphene is deposited. USE - Method for preparing high purity graphene. DETAILED DESCRIPTION - Preparing high purity graphene involves preparing a polyamine salt solution, preparing a polyamic acid film by depositing the prepared polyamic acid salt solution onto a metal substrate using Langmuir-Blodgett (LB) technique, converting the polyamic acid film into a polyimide film by heating under an argon flow, heating the polyimide film to convert it into a carbon film, and maintaining the heated temperature to convert it to graphene, cooling the metal substrate on which the graphene is deposited, transferring the graphene to the silicon substrate, and recovering the graphene from the graphene transferred to the silicon substrate.