▎ 摘　　要

NOVELTY - The method involves forming (S110) a graphene on a substrate. A pattern formation jig is arranged (S120) on the substrate. The solution is supplied (S130) on the substrate. An evaporation-induced self assembly (EISA) is generated (S140) above the pattern formation jig, such that the soluble pattern is formed on the graphene. The graphene pattern is formed (S150) corresponding to the solute pattern. The solute pattern contains polymethyl methacrylate, metal particle and inorganic material particle. The substrate contains polyethylene terephthalate and silicon dioxide/silicon. USE - Method for manufacturing graphene pattern used in electronic device such as transparent conductive film, sensor and FET. ADVANTAGE - Since the graphene pattern is formed corresponding to the solute pattern, the graphene pattern can be manufactured easily. The manufacturing cost of the graphene pattern can be reduced. Thus, the high quality graphene pattern can be obtained. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the process for manufacturing graphene pattern. (Drawing includes non-English language text) Step for forming graphene on substrate (S110) Step for arranging pattern formation jig on substrate (S120) Step for supplying solution of substrate (S130) Step for generating EISA above pattern formation jig (S140) Step for forming graphene pattern corresponding to solute pattern (S150)