▎ 摘　　要

NOVELTY - The interconnect structure (200A) has a lower line (230) that is formed in a dielectric. An upper line (250) is formed on or above the lower line. The upper line is electrically coupled with the lower line. The upper line is provided with an upper metal (252) that is formed on or above the lower line. An upper graphene (255) is formed on a portion of an upper surface of the upper metal, a portion of a first side surface of the upper metal or a portion of a second side surface of the upper metal. The upper metal comprises one of rhodium (Rh), platinum (Pt), iridium (Ir), niobium (Nb), nickel (Ni), aluminum (Al), ruthenium (Ru), molybdenum (Mo), osmium (Os), copper (Cu), and cobalt (Co). The upper line is provided with an upper adhesion layer (254) that is formed on a lower surface of the upper metal. USE - Interconnect structure for use in semiconductor package of electronic device. Uses include but are not limited to music player, video player, entertainment unit, navigation device, communication device, mobile device, mobile phone, smartphone, personal digital assistant, fixed location terminal, tablet computer, computer, wearable device, Internet of things (loT) device, laptop computer, server and device in automotive vehicle. ADVANTAGE - The interconnect structure has high pin count devices and/or high production volume components, and reduces the resistance-capacitance (RC) delay, and is cost-effective to fabricate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for fabricating interconnect structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the interconnect structure. Interconnect structure (200A) Lower line (230) Upper line (250) Upper metal (252) Upper adhesion layer (254) Upper graphene (255)