▎ 摘　　要

NOVELTY - The structure has a bottom electrode (7) connected with an n-type silicon substrate (1). A silicon dioxide isolation layer (2) is covered on a window (3). A top electrode (4) is covered with a cover. An oxidation graphene film layer (6) is covered on the bottom electrode. A graphene unit (5) is connected with an outer side of the top electrode. Thickness of the n-type silicon substrate is 300 to 500. Thickness of the silicon dioxide isolation layer is 200 to 500nm. Thickness of the oxidation graphene film layer is 100 to 500nm. The n-type silicon substrate is connected with the top electrode. USE - Temperature sensor integrated oxidation graphene/silicon hetero-junction structure. ADVANTAGE - The structure is simple and convenient to use, and has high sensitivity. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a temperature sensor integrated oxidation graphene/silicon hetero-junction structure. N-type silicon substrate (1) Silicon dioxide isolation layer (2) Window (3) Top electrode (4) Graphene unit (5) Oxidation graphene film layer (6) Bottom electrode (7)