▎ 摘　　要

NOVELTY - The device has a substrate formed with a hole injection layer, a hole transporting layer, a quantum dot light emitting layer and an electronic transmission layer. The hole injection layer is made of hydrogen halide acid and 100 wt.% of hole injection material. The hole injection material contains 0.01-0.04 wt.% graphene oxide i.e. graphene oxide nano-sheet, and poly (3,4-ethylenedioxythiophene) polystyrene sulfonate, where thickness of the hole injection layer is about 50-100nm. An electronic injection layer is formed between the electronic transmission layer and a cathode. USE - QLED device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a quantum dot LED (QLED) manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a QLED device.