▎ 摘　　要

NOVELTY - Processing the double-sided doping of single-layer graphene comprises e.g. using methane, hydrogen, and argon as gas sources in catalytic metals in a low-pressure CVD system growth of single-layer graphene film on the substrate, preparing the doped layer on the surface of the catalytic metal substrate/graphene by spin coating or vacuum evaporation, and performing annealing treatment to improve doping effect and stability; (iii) carrying out the spin-coating photosensitive polymer on the surface of catalytic metal substrate/graphene/doped layer, and then curing with ultraviolet light to form the flexible supporting layer, etching and removing in catalytic metal substrate in an etching solution, and then repeatedly washing with deionized water to remove ions and other impurity particles, and then allowing to dry at room temperature to obtain graphene/doped layer/flexible support layer. USE - The method is useful for processing the double-sided doping of single-layer graphene. ADVANTAGE - The method: achieves double-sided or double-sided doping of single-layer or multi-layer grapheme when compared with the traditional single-sided top doping process of graphene, thus improves the conductivity of double-sided or double-sided doping method of graphene, has wider adjustable range of the energy band, which improves the performance of graphene-based electronic devices. DETAILED DESCRIPTION - Processing the double-sided doping of single-layer graphene comprises (i) using methane, hydrogen, and argon as gas sources in catalytic metals in a low-pressure CVD system growth of single-layer graphene film on the substrate; (ii) preparing the doped layer on the surface of the catalytic metal substrate/graphene by spin coating or vacuum evaporation, and performing annealing treatment to improve doping effect and stability; (iii) carrying out the spin-coating photosensitive polymer on the surface of catalytic metal substrate/graphene/doped layer, and then curing with ultraviolet light to form the flexible supporting layer; (iv) etching and removing in catalytic metal substrate in an etching solution, and then repeatedly washing with deionized water to remove ions and other impurity particles, and then allowing to dry at room temperature to obtain graphene/doped layer/flexible support layer; and (v) preparing doped layer on the surface of the flexible support layer/doped layer/graphene by spin coating or vacuum evaporation, and then annealing to improve the doping effect and stability performance, obtaining the flexible support layer/doped layer/graphene/doped layer, and realizing double-sided doping of single-layer graphene.