• 专利标题:   Graphene manufacturing apparatus, comprises gas supplying unit for supplying gas, gas heating unit for heating gas, deposition chamber in which substrate is disposed and inlet pipe for supplying the gas into deposition chamber.
  • 专利号:   WO2012002666-A2, KR2012001591-A, WO2012002666-A3, US2013122220-A1, CN102958832-A, US2015353362-A1, CN102958832-B, KR1828528-B1
  • 发明人:   WON D, CHO S, WON D K, YUAN D
  • 专利权人:   SAMSUNG TECHWIN CO LTD, SAMSUNG TECHWIN CO LTD, HANWHA TECHWIN CO LTD
  • 国际专利分类:   C01B031/02, C23C016/26, C23C016/452, C23C016/46, C01B031/04
  • 专利详细信息:   WO2012002666-A2 05 Jan 2012 C01B-031/02 201205 Pages: 19 English
  • 申请详细信息:   WO2012002666-A2 WOKR004524 22 Jun 2011
  • 优先权号:   KR061274, KR026455, WOKR004524, CN80032694

▎ 摘  要

NOVELTY - Graphene manufacturing apparatus comprises: a gas supplying unit (10) for supplying a gas comprising carbon; a gas heating unit (20) for heating the supplied gas; a deposition chamber (50) in which a substrate (90) having a catalyst layer is disposed; and an inlet pipe (40) for supplying the gas of the gas heating unit into the deposition chamber. USE - Used as graphene manufacturing apparatus. ADVANTAGE - The apparatus manufactures large-size stable graphene economically and freely controls processing temperatures and energy thus making gas and substrate heating units separate from each other and reducing time and energy taken to synthesize graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for manufacturing graphene, comprising: moving the substrate to deposition chamber; supplying the gas to gas chamber separately disposed from the deposition chamber; heating the gas in the gas chamber; and introducing the heated gas into the deposition chamber, and synthesizing graphene on the substrate. DESCRIPTION OF DRAWING(S) - The figure is a block diagram illustrating the graphene manufacturing apparatus. Gas supplying unit (10) Gas heating unit (20) Inlet pipe (40) Deposition chamber (50) Substrate (90)