• 专利标题:   Manufacturing method for graphene transparent conductive film involves making graphene grow on base-material surface by performing plasma processing using hydrogen gas in bottom of pressure reduction in heated state.
  • 专利号:   JP2015013797-A
  • 发明人:   HASEGAWA M, KATO R, TSUGAWA K, ISHIHARA M, OKIKAWA Y, YAMADA T
  • 专利权人:   DOKURITSU GYOSEI HOJIN SANGYO GIJUTSU SO
  • 国际专利分类:   C01B031/02, C22C009/00, C23C026/00, H01B013/00, H01B005/14
  • 专利详细信息:   JP2015013797-A 22 Jan 2015 C01B-031/02 201518 Pages: 17 Japanese
  • 申请详细信息:   JP2015013797-A JP117973 06 Jun 2014
  • 优先权号:   JP120761

▎ 摘  要

NOVELTY - The manufacturing method involves depositing carbon ,which is inside the base material, on the base material surface by heating the metal base materials as a carbon source using the metal base materials into which carbon does not melt easily. The trace amount carbon component contained in the gas is then used for the trace amount carbon component and/or plasma processing adhering in reaction container. A graphene is made to grown on base-material surface by performing plasma processing using hydrogen gas in bottom of pressure reduction in heated state. USE - Manufacturing method for graphene transparent conductive film (claimed). ADVANTAGE - Since the high quality graphene transparent conductive film which controlled the number of layers of the graphene is compoundable, application to a transparent electrode, the graphene is suitable to be used for electrochemical electrode and biodevice, which require semiconductor devices, such as transparent conductive films, such as a touchscreen use, transistor, and an integrated circuit, or an electronic device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a metal base material used for manufacturing method of graphene transparent conductive film.