▎ 摘　　要

NOVELTY - The wire has a metal film (2) provided on a substrate (1), and a metal part (3) provided on the metal film. Graphene wires (4) are formed on the metal part, in which the graphene wires are electrically connected to the metal film. The metal film and metal part are formed using different metals or alloys. The metal film and metal part may be made of a metal selected from a group including copper, nickel, cobalt, iron, ruthenium, titanium, indium, platinum, or an alloy including two or more kinds of metals selected from the group. USE - Wire used in semiconductor device (claimed). ADVANTAGE - Provides a wire that has reduced resistance since overlapping displacement occurs in the graphene fabricated from the facets. Provides a semiconductor device whose extension direction of the graphene wire is controlled can be obtained just by adjusting the wire width of the minute wire. Avoids graphene wire problems since the extension direction of the graphene wire can be controlled. Forms thick graphene wire to ensure reduced wire resistance, relaxed wire current density, and improved wire reliability. Ensures that the minute wire on the narrow side can achieve further miniaturization of wires since the adjustment film is reduced. Ensures that the graphene wire has large area and high reliability since the metal film, suitable for the formation of large-area graphene, is formed in the direction where graphene extends. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic sectional view of the wire. Substrate (1) Metal film (2) Metal part (3) Graphene wires (4) First adjustment film (5) Second adjustment film (6)