▎ 摘　　要

NOVELTY - Novel gallium nitride (GaN) epitaxial structure comprises light emitting device-on-field effect transistor (LED-on-FET) structure and FET-on-LED structure. The LED-on-FET structure has substrate (1) and GaN buffer layer (2), u-GaN layer (3), n-GaN layer (4), p-GaN layer (5), n-GaN layer A (6), quantum well layer (7), and p-GaN layer B. The FET-on-LED structure has substrate, GaN buffer layer (sequentially laminated on substrate from bottom to top), u-GaN layer, n-GaN layer A, quantum well layer, p-GaN layer B, nGaN layer, p-GaN layer, and n-GaN layer A. USE - Novel GaN epitaxial structure used for active matrix Micro-LED and Mini-LED (claimed). ADVANTAGE - The GaN epitaxial structure solves the technical problem, exists active matrix MicroLED and MiniLED display screen technology respectively the driving circuit and the LED pixel on different substrates for transferring and bonding integration, and has the potential of industrial application. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) a method for preparing new GaN epitaxial structure, which involves using metal organic chemical vapor deposition (MOCVD) technology for epitaxially growing FET full structure on substrate, continuously growing LED new-type LED-on-FET epitaxial structure, using MOCVD technology for epitaxially growing LED full structure on substrate, continuously growing FET structure, obtaining new FET-on-LED epitaxial structure, using MOCVD technology to prepare n-GaN layer, controlling temperature at 1000-1200 ℃, controlling flow rate of reactant is trimethyl gallium 200-300 standard cubic centimeters per minute (sccm), controlling flow rate of carrier gas is 3000-6000 sccm, selecting carrier gas from at least one of them, using MOCVD technology to prepare p-GaN layer, controlling temperature at 850-1150 ℃, controlling flow rate of reactant is 200-300 sccm, controlling flow rate of carrier gas is 3000-6000 sccm, selecting carrier gas, using MOCVD technology to prepare n-GaN layer A, controlling temperature at 1000-1200 ℃, controlling flow rate of reactant is trimethyl gallium 200-300 sccm, controlling flow rate of carrier gas is 3000-6000 sccm, selecting carrier gas, using MOCVD technology to prepare quantum well layer, controlling temperature at 700-900 ℃, controlling flow rate of reactant is trimethyl gallium 80-100 sccm, controlling flow rate of carrier gas is 3000-6000 sccm, selecting carrier gas, using MOCVD technology to prepare p-GaN layer B, controlling temperature at 850-1150 ℃, controlling flow rate of reactant is trimethyl gallium 200-300 sccm, controlling flow rate of carrier gas is 3000-6000 sccm, and selecting carrier gas; and (2) an application of the new GaN epitaxial structure, which comprises raw material as monolithic vertical integrated light emitting device is applied to active matrix Micro-LED and Mini-LED. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of novel gallium nitride epitaxial structure. 1Substrate 2GaN buffer layer 3u-GaN layer 4n-GaN layer 5p-GaN layer 6n-GaN layer A 7Quantum well layer