• 专利标题:   Controlling bandgap of diamond comprises preparing diamond base material, converting surface of diamond base material into graphene by predetermined thickness using high-density hydrogen plasma and adjusting graphene length.
  • 专利号:   KR2021058577-A, KR2401334-B1
  • 发明人:   LEE J K, SU J, JEON H J, SEO H
  • 专利权人:   KOREA INST SCI TECHNOLOGY
  • 国际专利分类:   B01J019/08, C01B032/184, C01B032/28
  • 专利详细信息:   KR2021058577-A 24 May 2021 C01B-032/28 202148 Pages: 12
  • 申请详细信息:   KR2021058577-A KR146196 14 Nov 2019
  • 优先权号:   KR146196

▎ 摘  要

NOVELTY - Controlling bandgap of diamond comprises preparing a diamond base material, converting the surface of the diamond base material into graphene by a predetermined thickness using high-density hydrogen plasma and adjusting the graphene length to control the band gap of diamond to less than 3 eV. USE - The method is useful for controlling bandgap of diamond. ADVANTAGE - The method can precisely control length of the graphene layer to a nano level. DESCRIPTION OF DRAWING(S) - The drawing shows a structure in which graphene is formed from a surface of a diamond base material and a density of state.