▎ 摘　　要

NOVELTY - Preparation of graphene comprises cleaning silicon (Si) substrate, putting into vacuum reactor under protection of hydrogen gas, raising temperature, introducing propane (C3H8) at flow rate of 40 standard cubic centimeters per minute (sccm) for 4-8 minutes, growing carbon layer on substrate, raising temperature, passing silane (SiH4) and C3H8 on substrate, heteroepitaxial growing of 3C (carbon)-SiC (silicon carbide), cooling to room temperature and performing plasma-enhanced chemical vapor deposition (PECVD) to deposit 0.4-1.1 mu m silicon dioxide (SiO2) photoresist mask layer. USE - The graphene is used for manufacturing high-mobility graphene transistor. ADVANTAGE - The method has low cost and high production efficiency. DETAILED DESCRIPTION - Preparation of graphene comprises: (A) cleaning Si substrate having thickness of 4-12 in, putting into chemical vapor deposition system of vacuum reactor at 10-7 mbar under protection of hydrogen gas and raising temperature to 1000-1150 degrees C; (B) introducing C3H8 at flow rate of 40 sccm for 4-8 minutes and growing carbon layer on substrate; (C) raising temperature to 1150-1350 degrees C, passing SiH4 and C3H8 on the surface of substrate for 36-60 minutes, heteroepitaxial growing of 3C-SiC and cooling to room temperature; (D) performing PECVD to deposit 0.4-1.1 mu m SiO2 photoresist mask layer; (E) carving device of the substrate with the same shape of window image mask layer to expose 3C-SiC; (F) setting on quartz tube and heating to 600-1100 degrees C; (G) introducing argon (Ar) gas and chlorine gas (Cl2) to the quartz tube for 4-7 minutes to produce C film; (H) placing C film in hydrofluoric acid buffer solution to remove pattern other than SiO2; (I) performing physical vapor deposition (PVD) to plate 250-350 nanometers of copper (Cu) film on C film; (J) annealing plated Cu film at 900-1100?C for 10-30 minutes under protection of Ar gas to produce patterned graphene; and (K) placing in ferric chloride solution to remove Cu film.