▎ 摘　　要

NOVELTY - The detector has two photoelectric detection units that are placed up and down or in parallel. The photoelectric detection units are made of semiconductor wafers or perovskite heterojunction type, photoconductive type or Schottky junction type photodetection unit with thin film as light absorbing layer. A current ratio of the two photodetecting units changes regularly with the increase of the wavelength of the detected light. The current ratio is adjusted according to the current ratio that identifies the wavelength of the detected light. A material of the semiconductor wafer is silicon and germanium. A group II-V semiconductor material is indium arsenide, gallium arsenide or indium phosphide and mercury cadmium telluride. A perovskite film is a caesium methylammonium lead halide perovskite film or a cesium boron triiodide perovskite film. The two-dimensional thin film material is graphene, palladium diselenide, palladium telluride, platinum diselenide or platinum telluride. USE - UV-infrared wavelength detector based on photoelectric detection units used in medical diagnosis, visible light communication (VLC), non-destructive analysis technology and spectrometers. ADVANTAGE - The wavelength detector detects the wavelength range from 265 nm -1.6 microns, with stable property, strong reliability, fast response speed, high accuracy and repeatability. The preparation technique is simple and the cost is low. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene or germanium Schottky junction-based wavelength detector. Metal electrode (2-1) Graphene film (2-2) Germanium sheets (2-3,2-4) Indium gallium alloy (2-5) Glass substrate (2-6)