▎ 摘　　要

NOVELTY - The device has a monolayer (10) formed with a two-dimensional material and a set of crumples (14). The set of crumples are present in regions of the monolayer. The monolayer is provided with uncrumpled regions, where the monolayer comprises root-mean-square (RMS) roughness of from about 1 nanometer to about 500 nanometer, and the crumples include pitch of about 500 nanometer or less in one direction that is parallel to the monolayer. Source and drain electrodes comprise a gold film including the set of crumples. USE - Crumpled graphene FET device i.e. solution-gated FET (claimed). ADVANTAGE - The device ensures that simplicity of thermal processing allows deterministic tunability of crumple morphology and density over large range of strains through simple processing parameters such as duration, temperature, irradiation area and mechanical constraints. The device utilizes direct patterning approach to enable monolithic integration of flat and textured graphene/graphite to realize mechanically robust and flexible advanced biosensors in advance. The device minimizes breakage of a graphene film so as to exercise extreme care to minimize any disturbance to a setup and liquid interface with measures including securing a container to a lab bench and sealing the container to prevent air entrainment and turbulence. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for creating crumples in a monolayer in a crumpled graphene FET device. DESCRIPTION OF DRAWING(S) - The drawing shows a screen shot of scanning electron micrograph (SEM) images of crumpled chalcogenide to be produced by uniform/equi-biaxial straining. Monolayer of crumpled graphene FET device (10) Crumples (14)