▎ 摘　　要

NOVELTY - The method involves preparing single crystal metal foil and a target substrate. A substrate contact of the target substrate is prepared. A metal foil layer contact and a rear surface of a single metal foil are prepared. The metal foil contact and the substrate layer contact are pressed by using a pressing machine a certain temperature and pressure condition. Target substrates are placed with metal foil contacts in thermal CVD system. Poly methyl methacrylate spin-coating is performed on an upper surface of graphene. A patterned photoresist mask pattern is prepared by photo-etching. The patterned photoresist mask pattern is removed and graphene of a mask uncovered area by dry etching. USE - Method for preparing graphical graphene with large area on original position. Uses include but are not limited to photoelectron, microelectronic, biochemical and energy fields. ADVANTAGE - The method is suitable for low temperature transfer-free preparation of graphite alkenyl on large area substrate, which is good for promoting commercial wide application of graphene. The method ensures graphene during the growth period, the target substrate has no high temperature (greater than 400?? C) processing, realizing the butt joint of the temperature tolerance of the graphene with large area such as the growth temperature and the glass substrate, ensures the in-situ growth of graphene, avoids the graphene damage caused by transfer, realizes the compatibility of graphene in-site growth and glass substrate preparation process of large area, and claims the material component by controlling the contact thickness and shape, it can realize the growth of high quality graphene layer number, distribution and shape. DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram illustrating a method for preparing graphical graphene with large area on original position. (Drawing includes non-English language text).