▎ 摘　　要

NOVELTY - Preparing conductive film comprises (i) cleaning electronic device; (ii) placing cleaned electronic device in coating chamber of magnetic control sputtering device; (iii) vacuumizing the coating chamber by a mechanical pump, where the pressure in the coating chamber is 0.1 Pa; (iv) vacuumizing the coating chamber by the molecular pump, where the pressure in the coating chamber is 0.005 Pa; (v) controlling the temperature in the coating chamber to 50-60 degrees C; and (vi) depositing an indium tin oxide film, aluminum-doped zinc oxide film, indium zinc oxide film, titanium dioxide film, graphene oxide aerogel film or aluminum-doped zinc oxide film on the surface of the electronic device in the coating chamber through the magnetron sputtering device, where the surface resistance of the conductive film is controlled at 106-109 Omega . USE - The method is useful for preparing conductive film. ADVANTAGE - The film has stable performance and high antistatic effect; and cannot easily be scraped by other objects. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) conductive film, prepared as mentioned above; and (2) electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for preparing conductive film (Drawing includes non-English language text).