• 专利标题:   Simulation method for detecting poisonous gas by using cobalt-doped modified indium nitride sensor, involves absorbing ammonia and hydrogen sulfide by gas-sensitive mechanism of nitride sensor, and determining modified sensor response.
  • 专利号:   CN113223642-A
  • 发明人:   DONG H, LI W, LU Z, LUO H, SUN W, LIANG H, TAN Y
  • 专利权人:   UNIV CHINA MINING TECHNOLOGY BEIJING
  • 国际专利分类:   G06F030/20, G16C060/00
  • 专利详细信息:   CN113223642-A 06 Aug 2021 G16C-060/00 202170 Pages: 10 Chinese
  • 申请详细信息:   CN113223642-A CN10479957 30 Apr 2021
  • 优先权号:   CN10479957

▎ 摘  要

NOVELTY - The method involves establishing a molecular ball stick model according to molecular formula of gas pollutant ammonia and hydrogen sulfide. An indium nitride single molecule layer of a graphene-shaped structure is constructed. A doping mode of a lowest energy of a cobalt element is determined on a surface of the indium nitride single molecule layer. Adsorption process of gas molecule is simulated close to a surface of a cobalt-doped modified indium nitride single-molecule layer. Ammonia and hydrogen sulfide are absorbed by a gas-sensitive mechanism of a cobalt-doped indium nitride sensor. Modified sensor response is determined. USE - Simulation method for detecting poisonous gas by using a cobalt-doped modified indium nitride sensor. ADVANTAGE - The method enables improving gas sensitivity of the indium nitride sensor to ammonia and hydrogen sulfide, analyzing the gas-sensitive mechanism of the cobalt-doped modified indium nitride sensor, determining the sensor response of modified structure absorbing gas pollutant and providing theoretical basis for the cobalt-doped indium nitride sensor for detecting ammonia and hydrogen sulfide gas pollutant. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a simulation method for detecting poisonous gas by using a cobalt-doped modified indium nitride sensor. (Drawing includes non-English language text).