▎ 摘　　要

NOVELTY - The method involves putting a substrate (10) in a chamber of an electron cyclotron resonance device, and vacuuming the chamber. Carbon-containing gas is conducted into the chamber, where the carbon-containing gas has pressure of 10 power minus 2 ton to 10 power minus 4 ton in the chamber. The substrate is heated until the substrate has temperature of 100 degree Celsius to 700 degree Celsius. Dual or multi-microwave with an electron cyclotron resonance mechanism is utilized to excite the carbon-containing gas to deposit a graphene layer (13) on the substrate. USE - Method for forming a graphene layer e.g. multi-layered graphene layer or few-layered graphene layer, deposited on a substrate e.g. low temperature substrate such as glass substrate, silicon dioxide substrate, pure copper substrate and plastic substrate. ADVANTAGE - The method enables transferring the graphene layer from the substrate to another substrate in a time-efficient and cost-effective manner. The method allows inert gas e.g. argon, and hydrogen to be conducted into the chamber before depositing the graphene layer on the substrate so as to clean a substrate surface, chemically reduce the substrate surface, avoid impure phase or amorphous carbon from being formed on the graphene layer surface and modify the graphene layer to reduce electrical resistance. DETAILED DESCRIPTION - The carbon-containing gas is hydrocarbon compound e.g. methane, ethane and ethyne. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a deposited graphene layer on a substrate having protrusion. Substrate (10) Protrusion (11A) Graphene layer (13)