▎ 摘　　要

NOVELTY - A semiconductor substrate comprises a silicon carbide single crystal substrate (10SB), a graphene layer (11GR) arranged on the silicon surface of the single crystal substrate, a silicon carbide epitaxial growth layer (RE) arranged above the single crystal substrate via the graphene layer, and a polycrystalline layer (15PS) arranged on the silicon surface of the epitaxial growth layer. USE - Substrate used for semiconductor module applications such as insulated gates module, diode modules, metal oxide semiconductor field effect transistor, electric vehicles such as hybrid vehicles and rails, and used as power modules for inverter circuits, as power sources for industrial robots, and wind power generators e.g. solar cell and power generation devices. ADVANTAGE - The substrate is economical and has excellent quality. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of the semiconductor substrate, which involves forming a graphene layer on the silicon surface of the silicon carbide single crystal substrate, forming the silicon carbide epitaxial growth layer on the graphene layer, forming a layer (i) on the silicon carbide epitaxial growth layer, annealing the layer to polycrystallize and forming a layer (ii) on the silicon carbide epitaxial growth layer, attaching a temporary substrate on the layer (ii), separating the silicon carbide single crystal substrate from the graphene layer and on the carbide surface (C) of the silicon carbide epitaxial growth layer, forming a silicon carbide polycrystalline growth layer, exposing the temporary substrate, annealing the temporary substrate to sublimate the temporary substrate and the silicon carbide polycrystalline growth layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the manufacture of the semiconductor substrate. Silicon carbide single crystal substrate (10SB) Graphene layer (11GR) Silicon carbide epitaxial layer (12RE) Polycrystalline silicon layer (15PS) Carbide surface (C) Source terminal (S)