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  • 专利标题:   Multi-stage terahertz modulator based flexible graphene FET structure, has substrate whose lower surface is fixed on graphene film, drain electrode fixed on surface of graphene film, and gate electrode arranged on surface of ion gel layer.
  • 专利号:   CN106646930-A, CN106646930-B
  • 发明人:   WEN Q, LIU Y, HE Y, LIU H, CHEN Z, YANG Q, ZHANG H
  • 专利权人:   UNIV CHINA ELECTRONIC SCI TECHNOLOGY, UNIV CHINA ELECTRONIC SCI TECHNOLOGY
  • 国际专利分类:   G02F001/01, G02F001/015
  • 专利详细信息:   CN106646930-A 10 May 2017 G02F-001/01 201739 Pages: 13 Chinese
  • 申请详细信息:   CN106646930-A CN11244496 29 Dec 2016
  • 优先权号:   CN11244496

▎ 摘　　要

NOVELTY - The structure has a substrate i.e. Polyethylene terephthalate substrate, whose lower surface is symmetrically fixed on a graphene film, an ion gel layer, a source electrode, a drain electrode and a gate electrode. The drain electrode is fixed on a surface of the graphene film. The gate electrode is arranged on a surface of the ion gel layer. An ionic glue material is made of perchlorate, polyoxyethylene and methanol mixed configuration materials. The source electrode, the drain electrode and the gate electrode are made of a metal material. USE - Multi-stage terahertz modulator based flexible graphene FET structure. ADVANTAGE - The structure fixes two flexible graphene FETs on two sides of the substrate so as to increase device modulation depth and realize better terahertz wave amplitude modulation function of the structure in an effective manner. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a multi-stage terahertz modulator based flexible graphene FET structure.