• 专利标题:   Preparation of graphene conductive film for thin film transistor, involves annealing catalyst particles in pores of template to form film, growing graphene nanowires, removing template and film, and depositing obtained liquid on substrate.
  • 专利号:   CN110323270-A
  • 发明人:   XIA Y, ZHUO E
  • 专利权人:   CHUZHOU HKC OPTOELECTRONICS TECHNOLOGY, BEIHAI HUIKE PHOTOELECTRIC TECHNOLOGY CO
  • 国际专利分类:   G02F001/1368, H01L029/40, H01L029/49, H01L029/786
  • 专利详细信息:   CN110323270-A 11 Oct 2019 H01L-029/40 201990 Pages: 13 Chinese
  • 申请详细信息:   CN110323270-A CN10575383 28 Jun 2019
  • 优先权号:   CN10575383

▎ 摘  要

NOVELTY - Preparation of graphene conductive film, involves preparing an anode aluminum oxide template, forming pores on the anode aluminum oxide template, depositing metal catalyst particles in the pores by atomic layer deposition, heating and annealing to form a metal catalytic film, growing graphene nanowires on the metal catalytic film, removing the template and metal catalytic film to obtain a graphene-nanowire-formation liquid, and depositing the liquid on a substrate. USE - Preparation of graphene conductive film for thin film transistors (claimed). ADVANTAGE - The method improves production efficiency, forms metal catalyst film with uniform thickness, controls growth of the graphene nanowires, forms graphene conductive film having stable and uniform thickness, excellent transparency and conductivity, and high density, and is suitable for industrial applications. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for thin film transistor.