• 专利标题:   Preparation of atom scale graphene groove, e.g. for nano-electronics field, by suspending graphene on high temperature resistant substrate, depositing metal atoms on surface, etching in argon/hydrogen atmosphere, cooling, and vacuum-drying.
  • 专利号:   CN102689897-A, CN102689897-B
  • 发明人:   FU Y, HUANG R, LI C, WEI Z, ZHANG X, YE T
  • 专利权人:   UNIV PEKING
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN102689897-A 26 Sep 2012 C01B-031/04 201324 Pages: 6 Chinese
  • 申请详细信息:   CN102689897-A CN10213139 25 Jun 2012
  • 优先权号:   CN10213139

▎ 摘  要

NOVELTY - Preparation of an atom scale graphene groove comprises placing or suspending graphene on a high temperature resistant substrate; depositing single metal atoms or metal cluster with scale of less than 10 nm and formed by several atoms on the graphene surface; and etching graphene at 400-800 degrees C and under argon (Ar)/hydrogen gas (H2) atmosphere, naturally cooling to room temperature, taking out, vacuum-drying, and storing in a clean environment. USE - Method for the preparation of an atom scale graphene groove used for micro-structure, physical microelectronics, and nano-electronics field. ADVANTAGE - The etched graphene groove has atom scale smooth edge with chirality, thus reducing influence of edge defect for graphene performance.