▎ 摘　　要

NOVELTY - The method involves providing a gallium nitride (GaN) substrate with an atomic step morphology, and growing a graphene layer on the surface of the GaN substrate. The width of the atomic steps of the GaN substrate is set to be greater than 60 nm to form a heterojunction structure with ohmic contact characteristics. The width of the atomic steps of the GaN substrate is set to be less than 20 nm to form a heterojunction structure with Schottky contact characteristics. USE - Manufacturing method of heterojunction structure of electrode structure for electronic device (all claimed). ADVANTAGE - The method facilitates the use of the graphene or GaN heterojunction structure. Both the electrode structure and the electronic device adopt the heterojunction structure. The GaN heterojunction structure produced by the production method has better light transmittance and conductivity. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) an electrode structure; and (2) an electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart illustrating the method for manufacturing heterojunction structure. (Drawing includes non-English language text)