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  • 专利标题:   Preparation of boron-doped graphene by placing substrate in chemical vapor deposition apparatus reaction chamber, heating, and alternately introducing gaseous carbon source and gaseous boron source.
  • 专利号:   CN103449415-A
  • 发明人:   WANG Y, ZHONG H, ZHOU M
  • 专利权人:   OCEAN S KING LIGHTING SCI TECHNOLOGY, SHENZHEN OCEAN S KING LIGHTING SCI TECH
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN103449415-A 18 Dec 2013 C01B-031/04 201414 Pages: 9 Chinese
  • 申请详细信息:   CN103449415-A CN10176572 31 May 2012
  • 优先权号:   CN10176572

▎ 摘　　要

NOVELTY - Preparation of boron-doped graphene comprises placing substrate in chemical vapor deposition apparatus reaction chamber, and heating to 500-1300 degrees C; and alternately introducing gaseous carbon source and gaseous boron source under protective gas atmosphere for 1-60 minutes. USE - Method for preparation of boron-doped graphene (claimed). ADVANTAGE - The graphene has high boron content.