• 专利标题:   Photonic crystal capable for realizing large negative Goos-Hansen displacement of angular displacement sensor, has periodic crystal structure formed with graphene single layer, and defect layer located at outer side of periodic crystal structure close to emitting direction.
  • 专利号:   CN113534298-A, CN215297721-U
  • 发明人:   LIU F
  • 专利权人:   UNIV HUBEI SCI TECHNOLGY
  • 国际专利分类:   G02B001/00
  • 专利详细信息:   CN113534298-A 22 Oct 2021 G02B-001/00 202195 Chinese
  • 申请详细信息:   CN113534298-A CN10841656 26 Jul 2021
  • 优先权号:   CN10841656, CN21701251

▎ 摘  要

NOVELTY - The photonic-crystal has a periodic crystal structure provided with multiple first dielectric layers and multiple second dielectric layers, where each first dielectric layer is alternately distributed on each second dielectric layer. Two sides of the periodic crystal structure are formed with a graphene single layer. A defect layer is located at an outer side of the periodic crystal structure close to an emitting direction. The first dielectric layer is made of magnesium fluoride. The second dielectric layer is made of zinc sulfide. The defect layer is made of silicon dioxide. USE - Photonic crystal capable for realizing large negative Goos-Hansen displacement of an angular displacement sensor. Can also be used in a high sensitivity sensor and an optical switch. ADVANTAGE - The photonic-crystal can conveniently form an edge defect layer for controlling material and thickness of the defect layer, and can avoid weak loss of the graphene layer caused by sharp change in phase of reflection coefficient near a defect mode. The photonic-crystal can improve reflectivity of light, and can detect presence of negative goos-hansen displacement of the angular displacement sensor.