▎ 摘　　要

NOVELTY - The method involves performing photolithography and etching on a ultraviolet LED chip (1) to expose portion of a N-AlGaN structure (10). A single-layer or multi-layer graphene film is prepared, and a graphene film (40) is transferred to a surface of the ultraviolet LED chip. The photolithography and etching of the ultraviolet LED chip are performed to retain the graphene film in a specific region on the surface of the ultraviolet LED chip, and the graphene film is removed in other regions. An electron beam evaporation device is used to vaporize the open area of the surface of the ultraviolet light LED chip with a P electrode and an N electrode. A substrate (70) is grind on a back surface of the ultraviolet LED chip to transfer the graphene film onto the substrate on the back surface of the ultraviolet LED chip. USE - Method for manufacturing ultraviolet light LED chip (claimed). ADVANTAGE - The reliability of the chip is improved. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the ultraviolet light LED chip manufacturing method formed in step four ultraviolet light LED chip. (Drawing includes non-English language text) Ultraviolet LED chip (1) N-AlGaN structure (10) Quantum well (20) Graphene film (40) Substrate (70)