▎ 摘　　要

NOVELTY - The semiconductor device comprises a graphene bilayers (11,31,41), which does not contain the doped impurities. The source-drain electric current is passed through electrodes (12,13,22,23) that are positioned on an insulating layer (45) and graphene bilayers of the semiconductor device. The multilayer carbon nanotubes (25a,25b) are positioned on the graphene bilayers. The semiconductor elements (10,20A,20B,40A,40B) are positioned on an insulating film (28), which is positioned at one side of the graphene bilayers. USE - Semiconductor device for use as field effect transistor. ADVANTAGE - The semiconductor device is provided with a favorable switching characteristic present in semiconductor field effect transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a semiconductor device. Semiconductor elements (10,20A,20B,40A,40B) Graphene bilayers (11,31,41) Electrodes (12,13,22,23) Multilayer carbon nanotubes (25a,25b) Insulating film (28) Insulating layer (45)