• 专利标题:   Producing N-doped graphene quantum sheet, comprises applying nitrogen plasma on single-layer graphene formed on catalyst layer using chemical vapor deposition process.
  • 专利号:   KR2015143134-A
  • 发明人:   HONG B H, MOON J
  • 专利权人:   UNIV SEOUL NAT R DB FOUND
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   KR2015143134-A 23 Dec 2015 C01B-031/04 201603 Pages: 21 English
  • 申请详细信息:   KR2015143134-A KR072258 13 Jun 2014
  • 优先权号:   KR072258

▎ 摘  要

NOVELTY - Producing N-doped graphene quantum sheet, comprises applying a nitrogen plasma on a single-layer graphene formed on a catalyst layer using chemical vapor deposition process. USE - The method is useful for producing N-doped graphene quantum sheet (claimed). ADVANTAGE - The method is solvent-free and simple to process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for N-doped graphene quantum sheet produced by the above method.