▎ 摘　　要

NOVELTY - The method involves preparing a first substrate including a circuit including a circuit element formed on the translucent substrate and a first insulating film covering the circuit. A conductive layer (130) containing a single crystal metal portion is formed on the first insulating film. The semiconductor layer including a light emitting layer is formed. The semiconductor layer is etched to form a light emitting element. The conductive layer, the light emitting element (150-1,150-2), and the second insulating film covering the first insulating film are formed. The vias penetrating the first insulating film and the second insulating film are formed. The light emitting element and the circuit element are electrically connected through the via on a light emitting surface facing the surface of the light emitting element on the side of the first insulating film. The semiconductor layer includes a gallium nitride-based compound semiconductor. USE - Manufacturing method for image display device (claimed). ADVANTAGE - The light reflecting plate shields the light scattered downward from the light emitting elements, thus suppressing the arrival of light at the circuit element including the transistor and preventing the circuit element from malfunctioning. Since the light emitting elements are formed on the conductive layer of the single crystal metal through the graphene sheets, the light emitting elements having higher quality crystal structure are formed. Thus, the yield of the image display device is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an image display device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the image display device. Sub pixels (20-1,20-2) Circuit board (100) Conductive layer (130) Light emitting elements (150-1,150-2) Color filter (180)