• 专利标题:   Production of graphene oxide used in e.g. high-precision humidity sensor, involves forming monolayer of graphene on copper foil surface, placing graphene on silicon foil liner by ion etching and reacting graphene with oxygen plasma.
  • 专利号:   CN105000552-A
  • 发明人:   GUO H, LUO J, MENG N, SHI T, XU Y, YU B
  • 专利权人:   UNIV ZHEJIANG
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN105000552-A 28 Oct 2015 C01B-031/04 201601 Pages: 6 Chinese
  • 申请详细信息:   CN105000552-A CN10441929 24 Jul 2015
  • 优先权号:   CN10441929

▎ 摘  要

NOVELTY - The production method of graphene oxide involves preparing monolayer of graphene on copper foil surface, placing long single-layer graphene on a silicon foil liner by reactive ion etching technique, adjusting the power to 10-50 W, maintaining under helium atmosphere, passing 5-10 sccm flow of oxygen, allowing the oxygen plasma produced to react with single-layer of graphene for 2-5 minutes, taking out sample, maintaining at 20-25 degrees C and 30-60% relative humidity for 3-5 hours. USE - The method is useful for producing graphene oxide, which is used in high-precision humidity sensor, high precision DNA sequencing, large capacity lithium-ion battery and super capacitor. ADVANTAGE - The thickness of the oxidized graphene sheets is reduced and the size of graphene oxide is reached to the wafer size.