▎ 摘　　要

NOVELTY - Graphene-based LED epitaxial growth involves placing a sapphire substrate in a vacuum-evacuated plasma-enhanced chemical vapor deposition chamber, introducing methane, hydrogen and argon, depositing a graphene film on the substrate, placing the substrate in a metal organic chemical vapor deposition reaction chamber, growing a silicon-doped N-type gallium nitride layer, an active layer multiquantum well, a P-type aluminum-gallium nitride layer, and a P-type gallium nitride layer, introducing nitrogen, heat-preserving, and cooling. USE - Graphene-based LED epitaxial growth (claimed). ADVANTAGE - The method reduces defects, and improves epitaxial crystal quality so as to improve the photovoltaic performance of the LED. DETAILED DESCRIPTION - Graphene-based LED epitaxial growth involves placing a sapphire substrate in a vacuum-evacuated plasma-enhanced chemical vapor deposition chamber, introducing 600-900 sccm methane, 1000-1500 sccm hydrogen, and 1000-1200 sccm argon, depositing a graphene film of thickness 40-60 nm thick on the sapphire substrate at a temperature of 800-950 degrees C, a cavity pressure of 850-1000 mTorr, a radio frequency power of 50-80 W, placing the sapphire substrate with graphene film in a metal organic chemical vapor deposition reaction chamber, sequentially growing a silicon-doped N-type gallium nitride layer, an active layer multiquantum well, a P-type aluminum-gallium nitride layer, and a P-type gallium nitride layer by introducing 100-150 L/minute nitrogen at 700-800 degrees C, heat-preserving for 20-30 minutes, and cooling with the furnace.