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  • 专利标题:   Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.
  • 专利号:   US2022254641-A1, WO2022173543-A1, TW202233888-A
  • 发明人:   KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C
  • 专利权人:   APPLIED MATERIALS INC, APPLIED MATERIALS INC
  • 国际专利分类:   C23C016/02, C23C016/26, C23C016/511, H01J037/32, H01L021/285, H01L023/532, C01B032/186, H01L021/768, C23C016/513, C23C016/54
  • 专利详细信息:   US2022254641-A1 11 Aug 2022 H01L-021/285 202270 English
  • 申请详细信息:   US2022254641-A1 US174224 11 Feb 2021
  • 优先权号:   US174224

▎ 摘　　要

NOVELTY - Depositing graphene layer on substrate involves providing substrate within modular microwave plasma chamber, flowing carbon source and hydrogen source into modular microwave plasma chamber, striking plasma in modular microwave plasma chamber, and depositing graphene layer on substrate. The substrate temperature is 400degrees Celsius. USE - Method for depositing graphene layer on substrate used in plasma enhanced chemical vapor deposition of graphene at low temperatures. ADVANTAGE - The method enables to improve performance, and reduces contact resistance.